Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts-Reference-Cited by-同舟云学术

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Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts

Published:2014-09-29 Issue:13 Volume:105 Page:133513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuan Hui¹²,Badwan Ahmad¹,Richter Curt A.²,Zhu Hao¹²,Kirillov Oleg²,Ioannou Dimitris E.¹,Li Qiliang¹

Affiliation:

1. Electrical and Computer Engineering Department, George Mason University, Fairfax, Virginia 22030, USA

2. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899, USA

Funder

National Science Foundation (NSF)

National Institute of Standards and Technology (NIST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897008

Reference18 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2. Length scaling of carbon nanotube transistors

3. Toward Nanowire Electronics

4. Nanowire transistors without junctions

5. Physics of carbon nanotube electronic devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field effects of current crowding in metal-MoS2 contacts;Applied Physics Letters;2016-03-07

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