Field effects of current crowding in metal-MoS2 contacts-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Field effects of current crowding in metal-MoS2 contacts

Published:2016-03-07 Issue:10 Volume:108 Page:103505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuan Hui¹²³,Cheng Guangjun³,Yu Sheng²,Hight Walker Angela R.³,Richter Curt A.³,Pan Minghu¹,Li Qiliang²

Affiliation:

1. School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Rd., Wuhan, Hubei 430074, China

2. Department of Electrical and Computer Engineering, George Mason University, 4400 University Dr., Fairfax, Virginia 22030, USA

3. Engineering Physics Division, National Institute of Standards and Technology, 100 Bureau Dr., Gaithersburg, Maryland 20899, USA

Funder

National Science Foundation (NSF)

National Institute of Standards and Technology (NIST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/apl/108/10/1.4942409.pdf?itemId=/content/aip/journal/apl/108/10/10.1063/1.4942409&mimeType=pdf&containerItemId=content/aip/journal/apl

Reference43 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Electronic structure of two-dimensional crystals fromab initiotheory

4. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

5. Emerging Photoluminescence in Monolayer MoS2

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Batch fabrication of MoS2 devices directly on growth substrates by step engineering;Nano Research;2023-10-02

2. Current crowding in graphene–silicon schottky diodes;Nanotechnology;2023-05-09

3. Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements;Advanced Materials;2023-04-05

4. Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials;Nanomaterials;2022-10-31

5. Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies;Advanced Materials;2022-09-22

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3