Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process-Reference-Cited by-同舟云学术

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Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process

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Container-title:Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)
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Author:

Richier C.,Salome P.,Mabboux G.,Zaza I.,Juge A.,Mortini P.

Publisher

ESD Assoc

Link

http://xplorestaging.ieee.org/ielx5/7140/19230/00890084.pdf?arnumber=890084

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