Using Word Line (WL) Interference to Reduce Refresh Operations on 3D NAND Flash System-Reference-Cited by-同舟云学术

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Using Word Line (WL) Interference to Reduce Refresh Operations on 3D NAND Flash System

Published:2021-11-24 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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Author:

Yang Liu,Wang Qi,Li Qianhui,Yu Xiaolei,Huo Zongliang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661584/9661598/09661843.pdf?arnumber=9661843

Reference4 articles.

1. Exploring and Exploiting the Multilevel Parallelism Inside SSDs for Improved Performance and Endurance

2. Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs

3. Efficient Data Recovery Technique for 3D TLC NAND Flash Memory based on WL Interference

4. Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime;cai;ICCD,2012

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