Influence of device performance of Sub-10 nm GaN-based DG-MOSFETs over conventional Si-based SG-MOSFETs

Author:

Hasan Md. Rokib

Publisher

IEEE

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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2. Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (D-G-S-D-STFET) for high frequency applications;2023 3rd International conference on Artificial Intelligence and Signal Processing (AISP);2023-03-18

3. Optimization of Subthreshold Parameters of Graded-Channel Gate-Stack Double-Gate (GC-GS-DG) MOSFET Using PSO-CFIWA;Lecture Notes in Electrical Engineering;2022-09-12

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