Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8263417/08246710.pdf?arnumber=8246710
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis of energy density and scanning speed impacts on Ni/SiC ohmic contacts during laser annealing;Materials Science in Semiconductor Processing;2024-12
2. Ohmic contacts to n-type SiC: Influence of Au and Ta intermediate layers;Microelectronics Journal;2024-09
3. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08
4. How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC;Electronics;2024-01-03
5. Analysis of Energy Density and Scanning Speed Impacts on Ni/Sic Ohmic Contacts During Laser Annealing;2024
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