Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications-Reference-Cited by-同舟云学术

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Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications

Published:2018-02 Issue:2 Volume:65 Page:641-647
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jiang Shu-Yue,Li Xing-Yue,Chen Zhi-Zhan^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08246710.pdf?arnumber=8246710

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of energy density and scanning speed impacts on Ni/SiC ohmic contacts during laser annealing;Materials Science in Semiconductor Processing;2024-12

2. Ohmic contacts to n-type SiC: Influence of Au and Ta intermediate layers;Microelectronics Journal;2024-09

3. Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC;Materials Today Communications;2024-08

4. How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC;Electronics;2024-01-03

5. Analysis of Energy Density and Scanning Speed Impacts on Ni/Sic Ohmic Contacts During Laser Annealing;2024

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