Role of W in W/Ni Bilayer Ohmic Contact to n-Type 4H-SiC From the Perspective of Device Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8263417/08246710.pdf?arnumber=8246710
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC;Electronics;2024-01-03
2. Role of Ti and W in the Ni-based ohmic contacts to n-type 4H-SiC;Journal of Crystal Growth;2023-07
3. Annealing temperature dependent properties for Ni/Ti/W Ohmic contacts simultaneously formed on n- and p-type 4H-SiC;Semiconductor Science and Technology;2023-06-05
4. Numerical simulation on controlling the front-side temperature of thinned SiC substrate during ohmic contact to Ni or Ti using back-side laser annealing;Journal of Applied Physics;2022-07-21
5. Low temperature Cu/Ti/Al Ohmic contacts to p-type 4H-SiC;Journal of Alloys and Compounds;2022-04
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