Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer-Reference-Cited by-同舟云学术

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer

Published:2018-02 Issue:2 Volume:65 Page:537-541
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ning Honglong^ORCID,Zeng Yong^ORCID,Zheng Zeke,Zhang Hongke,Fang Zhiqiang,Yao Rihui^ORCID,Hu Shiben^ORCID,Li Xiaoqing,Peng Junbiao,Xie Weiguang,Lu Xubing^ORCID

Funder

National Key Research and Development Program of China

NSFC

National Key Basic Research and Development Program of China (973 program) founded by MOST

Guangdong Natural Science Foundation

Science and Technology Project of Guangdong Province

Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme (2016)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8263417/08245904.pdf?arnumber=8245904

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