Author:
Teng Yongxiao,Gao Qiang,Zhang Qian,Kou Jiabao,Xu Dianguo
Cited by
5 articles.
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1. Gate-Drive Circuits for Adaptive Operation of SiC mosfets;IEEE Transactions on Power Electronics;2024-07
2. Loss Modeling of the Si/SiC Hybrid Switch Considering Multiple Driving Parameters;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
4. Analysis of Switching Loss Based on Gate Resistance in a SiC MOSFET Inverter;2023 IEEE Conference on Energy Conversion (CENCON);2023-10-23
5. Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07