A K/Ka-Band Switchless Reconfigurable 65 nm CMOS LNA Based on Suspended Substrate Coupled Line
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology Karnataka, Surathkal, Mangalore, India
2. Department of Nano Science and Engineering, Centre for Nano Manufacturing, Inje University, Gimhae, South Korea
Funder
India-Korea Research International Bilateral Cooperation Division through Ministry of Science and Technology, Government of India under Grant
Science and Engineering Research Board (SERB), Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09741789.pdf?arnumber=9741789
Reference27 articles.
1. A Reconfigurable Dual-Frequency Narrowband CMOS LNA Using Phase-Change RF Switches
2. A Low-Power Reconfigurable Narrowband/Wideband LNA for Cognitive Radio-Wireless Sensor Network
3. A 28-/60-GHz Band-Switchable Bidirectional Amplifier for Reconfigurable mm-Wave Transceivers
4. Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-Enhanced Metamaterial Transmission Lines
5. A Ka/V Band-Switchable LNA With 2.8/3.4 dB Noise Figure
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1. A 18–33 GHz CMOS LNA with 26.7 dB peak gain and 2.8 dB minimum NF for K/Ka-band applications;AEU - International Journal of Electronics and Communications;2024-04
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3. A 28 nm CMOS low-noise amplifier with novel redundant noise cancellation technique beyond ultra-wideband for 6G-based wireless systems;AEU - International Journal of Electronics and Communications;2024-01
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