Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-Enhanced Metamaterial Transmission Lines-Reference-Cited by-同舟云学术

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Dual Q/V-Band SiGe BiCMOS Low Noise Amplifiers Using Q-Enhanced Metamaterial Transmission Lines

Published:2021-03 Issue:3 Volume:68 Page:898-902
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Lee Donghyun^ORCID,Nguyen Cam^ORCID

Funder

NPRP through the Qatar National Research Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/9364006/09184110.pdf?arnumber=9184110

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Flexible Tri-Band Coupler With Three Independently Tunable Frequencies;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. A Novel Active Inductor Based Low Noise Amplifier for Analog Front End of Bio-medical Applications;Arabian Journal for Science and Engineering;2024-05-11

3. Ka-/K-Band Frequency-Reconfigurable Single-Input Differential-Output Low-Noise Amplifier for 5G Applications;IEEE Microwave and Wireless Technology Letters;2023-09

4. A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 μm pHEMT;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

5. Compact TGV-Based Bandpass Filters Using Integrated Dual Composite Right/Left-Handed Resonators;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

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