Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/8600701/08685089.pdf?arnumber=8685089
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs;Indian Journal of Pure & Applied Physics;2023
2. A novel stair-stepping buffer-gate 4H-SiC MESFET with multiple recesses in a buffer layer;Ferroelectrics;2022-06-11
3. Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures;Cryogenics;2022-03
4. Scaling Effect in Gate-Recessed AlGaN/GaN Fin-Nanochannel Array MOSHEMTs;IEEE Access;2020
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