Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

Published:2023 Issue: Volume:11 Page:93956-93967
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Kim Yohan¹^ORCID,Kim Soyoung²^ORCID

Affiliation:

1. Department of Semiconductor and Display Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

Funder

National Research Foundation of Korea (NRF) grants

Korea Government Ministry of Science and Information and Communication Technology

IC Design Education Center (IDEC), Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10233846.pdf?arnumber=10233846

Reference20 articles.

1. Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

2. Prediction models of bit errors for NAND flash memory using 200 days of measured data

3. Research on prediction model for NAND flash bit errors

4. A Process-Aware Compact Model for GIDL-Assisted Erase Optimization of 3-D V-NAND Flash Memory

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP