Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory-Reference-Cited by-同舟云学术

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Investigation of Poly Silicon Channel Variation in Vertical 3D NAND Flash Memory

Published:2022 Issue: Volume:10 Page:108067-108074
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Lee Inyoung¹^ORCID,Kim Dae Hwan²^ORCID,Kang Daewoong³^ORCID,Cho Il Hwan¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Myongji University, Yongin, Republic of Korea

2. School of Electrical Engineering, Kookmin University, Seoul, Republic of Korea

3. Department of Electrical Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do, Republic of Korea

Funder

National Research Foundation of Korea

Korean Government Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09912418.pdf?arnumber=9912418

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling polycrystalline silicon channel dissolution mechanism in wet etching process of 3D NAND fabrication;Surfaces and Interfaces;2024-07

2. A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash;IEEE Access;2024

3. Exploring Performance and Reliability Behavior of Nanosheet Channel Thin-Film Transistors under Independent Dual Gate Bias Operation;ECS Journal of Solid State Science and Technology;2023-10-01

4. Polysilicon-Channel Synaptic Transistors for Implementation of Short- and Long-Term Memory Characteristics;Biomimetics;2023-08-15

5. Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation;IEEE Transactions on Nanotechnology;2023

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