Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge-Reference-Cited by-同舟云学术

Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

Published:2022 Issue: Volume:10 Page:86270-86285
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Pino-Monroy Dayana A.¹^ORCID,Scheer Patrick¹,Bouchoucha Mohamed Khalil¹^ORCID,Galup-Montoro Carlos²^ORCID,Barragan Manuel J.³^ORCID,Cathelin Philippe¹^ORCID,Fournier Jean-Michel³,Cathelin Andreia¹^ORCID,Bourdel Sylvain³^ORCID

Affiliation:

1. STMicroelectronics, Crolles, France

2. Department of Electrical and Electronics Engineering, Universidade Federal de Santa Catarina, Florianópolis, Brazil

3. TIMA Laboratory, CNRS, Grenoble INP, Université Grenoble Alpes, Grenoble, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09856610.pdf?arnumber=9856610

Reference29 articles.

1. Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

2. Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

3. Calculation of MOSFET distortion using the transconductance-to-current ratio (gm/ID);jespers;Proc IEEE Int Symp Circuits Syst (ISCAS),2015

4. Distortion analysis of MOSFETS for application in MOSFET-C circuits

5. CMOS Analog Design Using All-Region MOSFET Modeling

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