FDTD Investigation of Efficient and Robust Integration Between Si3N4 and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators
Author:
Affiliation:
1. Department of Physics, Faculty of Science, Kasetsart University, Bangkok, Thailand
2. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand
Funder
National Research Council of Thailand (NRCT), and Kasetsart University Research and Development Institute
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10052661.pdf?arnumber=10052661
Reference70 articles.
1. Fabrication of a high-Q factor ring resonator using LSCVD deposited Si_3N_4 film
2. Electrical characteristics of heavily arsenic and phosphorus doped polycrystalline silicon
3. Overcoming Si_3N_4 film stress limitations for high quality factor ring resonators
4. Emerging technologies in Si active photonics
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FDTD Investigation of Optical Coupling Between Si3N4 Based Waveguide and III-V Binary Semiconductor Compound Waveguide With Amorphous Si as an Optical Bridge;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02
2. FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength;Results in Optics;2024-02
3. Photodetectors integrating waveguides and semiconductor materials;Nanoscale;2024
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