Low-Cost Side-Channel Secure Standard 6T-SRAM-Based Memory With a 1% Area and Less Than 5% Latency and Power Overheads-Reference-Cited by-同舟云学术

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Low-Cost Side-Channel Secure Standard 6T-SRAM-Based Memory With a 1% Area and Less Than 5% Latency and Power Overheads

Published:2021 Issue: Volume:9 Page:91764-91776
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Weizman Yoav,Giterman Robert^ORCID,Chertkow Oron,Wicentowski Maoz,Levi Itamar^ORCID,Sever Ilan,Kehati Ishai,Keren Osnat^ORCID,Fish Alexander

Funder

Israel Science Foundation

Israel Innovation Authority in the frame of the Magneton Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/9312710/09453841.pdf?arnumber=9453841

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Leakage Power Attack-Resilient Design: PMOS-Reading 9T SRAM Cell;Electronics;2024-06-28

2. Leakage power attack resilient Schmitt trigger based 12T symmetric SRAM cell;Microelectronics Journal;2023-09

3. Design of Ultra Low Power 6T SRAM Cell Using 180 nm CMOS Technology for Access Enhancement;2022 International Interdisciplinary Conference on Mathematics, Engineering and Science (MESIICON);2022-11-11

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