Self-Heating and Corner Rounding Effects on Time Dependent Dielectric Breakdown of Stacked Multi-Nanosheet FETs-Reference-Cited by-同舟云学术

Self-Heating and Corner Rounding Effects on Time Dependent Dielectric Breakdown of Stacked Multi-Nanosheet FETs

Published:2023 Issue: Volume:11 Page:82208-82215
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Lim Jae Won¹^ORCID,Yoo Changhyun²^ORCID,Park Kiron³,Jeon Jongwook¹^ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering, Konkuk University, Seoul, Republic of Korea

2. Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, Republic of Korea

3. Foundary Division, Samsung Electronics, Yongin, Republic of Korea

Funder

National Foundation of Korea (NRF) grant

Korea Government Ministry of Science and ICT

Samsung Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10188827.pdf?arnumber=10188827

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5. Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach;padovani;Proc IEEE Int Rel Phys Symp (IRPS),2018

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