A Unified NVRAM and TRNG in Standard CMOS Technology
Author:
Affiliation:
1. Department of Computer and Network Engineering, The University of Electro-Communications (UEC), Tokyo, Japan
Funder
New Energy and Industrial Technology Development Organization
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09839528.pdf?arnumber=9839528
Reference47 articles.
1. A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM
2. A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security
3. D-RaNGe: Using Commodity DRAM Devices to Generate True Random Numbers with Low Latency and High Throughput
4. Aging-Resilient SRAM-based True Random Number Generator for Lightweight Devices
5. 36.1 Unified In-Memory Dynamic TRNG and Multi-Bit Static PUF Entropy Generation for Ubiquitous Hardware Security
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3. In-NVRAM Unified PUF and TRNG Based on Standard CMOS Technology;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
4. An efficient analysis for True Random number generators using A Postprocessor, Jitter Metastability, Tree-Based Interleaver & CMOS inverter prototype technology;2022 IEEE International Symposium on Smart Electronic Systems (iSES);2022-12
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