Surface passivation effects in AlGaN/GaN HEMTs on high-resistivity Si substrate
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4459058/4472437/04472507.pdf?arnumber=4472507
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated Gate Interface and Thermal Engineering;ECS Journal of Solid State Science and Technology;2022-06-01
2. Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET;Semiconductor Science and Technology;2021-04-14
3. Combined Implications of UV/O3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT;Crystals;2021-01-28
4. Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates;Journal of Applied Physics;2020-06-21
5. Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors;Solid-State Electronics;2010-11
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