Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Neutron radiation effects on metal oxide semiconductor (MOS) devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09
2. Design of an n-channel JFET on high-resistivity silicon for radiation-detector on-chip front-end electronics;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-11
3. The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates;Semiconductor Science and Technology;1994-09-01
4. The low-frequency noise behaviour at room temperature and at 77 K of pMOSTs fabricated on high-resistivity silicon substrates;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-04
5. An overview of CMOS-SOI technology and its potential use in particle detection systems;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1991-08