Design of an n-channel JFET on high-resistivity silicon for radiation-detector on-chip front-end electronics-Reference-Cited by-同舟云学术

Design of an n-channel JFET on high-resistivity silicon for radiation-detector on-chip front-end electronics

Published:1995-11 Issue:2-3 Volume:365 Page:473-479
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Dalla Betta G.F.,Verzellesi G.,Pignatel G.U.,Amon S.,Boscardin M.,Soncini G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Solid State Devices;Gatti,1988

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