Author:
Betta G.F.Dalla,Verzellesi G.,Boscardin M.,Bosisio L.,Pignatel G.U.,Ferrario L.,Zen M.,Soncini G.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithic integration of detectors and transistors on high-resistivity silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-09
2. Proton-induced damage in JFET transistors and charge preamplifiers on high-resistivity silicon;IEEE Transactions on Nuclear Science;2004-10
3. High-gain bipolar detector on float-zone silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-10
4. JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-10
5. Supergain transistors on high-purity float-zone silicon substrate;Applied Physics Letters;2003-08-18