Monolithic integration of detectors and transistors on high-resistivity silicon-Reference-Cited by-同舟云学术

Monolithic integration of detectors and transistors on high-resistivity silicon

Published:2007-09 Issue:2 Volume:579 Page:658-663
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Dalla Betta Gian-Franco,Batignani Giovanni,Boscardin Maurizio,Bosisio Luciano,Gregori Paolo,Pancheri Lucio,Piemonte Claudio,Ratti Lodovico,Verzellesi Giovanni,Zorzi Nicola

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. An IC-compatible detector process

2. Implanted silicon JFET on completely depleted high-resistivity devices

3. Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

4. DEPFET—a pixel device with integrated amplification

5. Silicon PIN radiation detectors with on-chip front-end junction field effect transistors

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