Analysis and Design of Inductorless Transimpedance Amplifier Employing Nested Feedforward Noise-Canceling Amplifiers
Author:
Affiliation:
1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
2. Department of Electronics and Control Engineering, Hanbat National University, Daejeon, South Korea
Funder
Original Technology Research Program for the Innovation of Military Defense Technology through National Research Foundation of Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9851481/09789549.pdf?arnumber=9789549
Reference32 articles.
1. A 40-Gb/s Optical Transceiver Front-End in 45 nm SOI CMOS
2. 40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90 nm CMOS
3. 10-Gb/s 0.13- $\mu{\rm m}$ CMOS Inductorless Modified-RGC Transimpedance Amplifier
4. A 53 dB $\Omega~7$ -GHz Inductorless Transimpedance Amplifier and a 1-THz+ GBP Limiting Amplifier in 0.13- $\mu$ m CMOS
5. A 10-Gb/s Inductorless Transimpedance Amplifier
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