40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90 nm CMOS-Reference-Cited by-同舟云学术

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40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90 nm CMOS

Published:2008-03 Issue:3 Volume:43 Page:642-655
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Liao Chih-Fan,Liu Shen-Iuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4456769/04456781.pdf?arnumber=4456781

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A 10 Gb/s Broadband Transimpedance Amplifier in 0.18 μm CMOS Technology for Optical Communications;2023 International Conference on Electrical Engineering and Photonics (EExPolytech);2023-10-19

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5. A 10-Gb/s Inductorless Low-Power TIA With a 400-fF Low-Speed Avalanche Photodiode Realized in CMOS Process;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-04

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