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Analysis and Design of D-Band Cascode SiGe BiCMOS Amplifiers With Gain-Bandwidth Product Enhanced by Load Reflection

  • Published:2021-09 Issue:9 Volume:69 Page:4059-4068
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Petricli IbrahimORCID,Lotfi HadiORCID,Mazzanti AndreaORCID

Funder

European Commission through the H2020 ECSEL Project Taranto

H2020 DREAM Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 170GHz 5.5dB NF Low-Noise Amplifier in 55nm SiGe BiCMOS;2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2024-06-09

2. An S-band SiGe BiCMOS Transmitter for an NV Center Based Quantum Magnetometer;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. A Miniaturized Chip-based ODNP Platform;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

4. A Four-Channel BiCMOS Transmitter for a Quantum Magnetometer Based on Nitrogen-Vacancy Centers in Diamond;IEEE Journal of Solid-State Circuits;2024-05

5. D-Band RX Front-End With a 0$^{\circ}$–360$^{\circ}$ Phase Shifter Based on Programmable Passive Networks in SiGe-BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024
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