A 13.5-dBm 1-V Power Amplifier for W-Band Automotive Radar Applications in 28-nm FD-SOI CMOS Technology-Reference-Cited by-同舟云学术

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A 13.5-dBm 1-V Power Amplifier for W-Band Automotive Radar Applications in 28-nm FD-SOI CMOS Technology

Published:2021-03 Issue:3 Volume:69 Page:1654-1660
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Nocera Claudio^ORCID,Papotto Giuseppe,Cavarra Andrea^ORCID,Ragonese Egidio^ORCID,Palmisano Giuseppe^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9370012/09329199.pdf?arnumber=9329199

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25- μm GaN HEMT Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-08

2. A Geometrically Scalable Lumped Model for Spiral Inductors in Radio Frequency GaN Technology on Silicon;Electronics;2024-07-07

3. CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications;Electronics;2024-05-28

4. A W-Band Power Amplifier With 19.6% PAE in 45-nm SOI CMOS;2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC);2024-03-15

5. A W-Band Amplifier in FinFET Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

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