A Configurable 10T SRAM-Based IMC Accelerator With Scaled-Voltage-Based Pulse Count Modulation for MAC and High-Throughput XAC-Reference-Cited by-同舟云学术

A Configurable 10T SRAM-Based IMC Accelerator With Scaled-Voltage-Based Pulse Count Modulation for MAC and High-Throughput XAC

Published:2023 Issue: Volume:22 Page:222-227
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Saragada Prasanna Kumar¹^ORCID,Manna Subhashish¹^ORCID,Singh Amandeep¹^ORCID,Das Bishnu Prasad¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Technology (IIT) Roorkee, Roorkee, India

Funder

YFRF, MeitY, India

SERB, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/10016255/10107807.pdf?arnumber=10107807

Reference18 articles.

1. Xcel-RAM: Accelerating Binary Neural Networks in High-Throughput SRAM Compute Arrays

2. A ternary based bit scalable, 8.80 TOPS/W CNN accelerator with many-core processing-in-memory architecture with 896 K synapses/mm2;okumura;Proc IEEE Symp VLSI Technol,0

3. A 16K current-based 8T SRAM compute-in-memory macro with decoupled read/write and 1-5 bit column ADC;yu;Proc IEEE Custom Integr Circuits Conf,0

4. SRAM-Based In-Memory Computing Macro Featuring Voltage-Mode Accumulator and Row-by-Row ADC for Processing Neural Networks

5. C3SRAM: In-Memory-Computing SRAM Macro Based on Capacitive-Coupling Computing

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