Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors-Reference-Cited by-同舟云学术

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Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors

Published:2005-09 Issue:5 Volume:4 Page:533-538
ISSN:1536-125X
Container-title:IEEE Transactions On Nanotechnology
language:en
Short-container-title:IEEE Trans. Nanotechnology

Author:

Ungersboeck E.,Pourfath M.,Kosina H.,Gehring A.,Cheong B.-H.,Park W.-J.,Selberherr S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx5/7729/32262/01504710.pdf?arnumber=1504710

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Insights into Dielectric Materials and Oxide Thickness-Dependent Conductance in Single-Walled CNTFET: A Parametric Simulation Study;2024 International Conference on Advances in Computing, Communication, Electrical, and Smart Systems (iCACCESS);2024-03-08

2. Scaling carbon nanotube complementary transistors to 5-nm gate lengths;Science;2017-01-20

3. Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio;ACS Nano;2015-01-02

4. Simple strategy to tune the charge transport properties of conjugated polymer/carbon nanotube composites using an electric field assisted deposition technique;Polymer International;2014-02-06

5. Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions;Applied Physics Letters;2007-11-12

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