Feasible Device Architectures for Ultrascaled CNTFETs-Reference-Cited by-同舟云学术

Feasible Device Architectures for Ultrascaled CNTFETs

Published:2018-01 Issue:1 Volume:17 Page:100-107
ISSN:1536-125X
Container-title:IEEE Transactions on Nanotechnology
language:
Short-container-title:IEEE Trans. Nanotechnology

Author:

Pacheco-Sanchez Anibal¹^ORCID,Fuchs Florian²^ORCID,Mothes Sven³^ORCID,Zienert Andreas⁴,Schuster Jorg²,Gemming Sibylle²,Claus Martin³^ORCID

Affiliation:

1. Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden, Dresden, Germany

2. Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden, Germany

3. Chair for Electron Devices and Integrated Circuits and the Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden, Germany

4. Center for Microtechnologies, Chemnitz University of Technology, Chemnitz, Germany

Funder

German National Science Foundation DFG

Center for Advancing Electronics Dresden

TU Dresden Graduate Academy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications

Link

http://xplorestaging.ieee.org/ielx7/7729/8249911/08113541.pdf?arnumber=8113541

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1. The Schottky barrier transistor in emerging electronic devices;Nanotechnology;2023-06-15

2. Carbon Nanotube Field Effect Transistors: An Aspect of Low Power and High Frequency Applications of CNTFETs;2023 International Conference on Disruptive Technologies (ICDT);2023-05-11

3. CNTFET-Based Universal Filter Using DO-CCII;Lecture Notes in Electrical Engineering;2023

4. Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-09

5. Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels;Journal of Applied Physics;2022-07-14