Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion-Reference-Cited by-同舟云学术

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Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

Published:2001-05 Issue:5 Volume:48 Page:999-1001
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Namkyu Park ,O K.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/19852/00918249.pdf?arnumber=918249

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved signal-to-noise-ratio of FET-type gas sensors using body bias control and embedded micro-heater;Sensors and Actuators B: Chemical;2021-02

2. Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs With Reverse Body Bias;IEEE Transactions on Semiconductor Manufacturing;2020-05

3. Experimental Extraction of Body Bias Dependence of Low Frequency Noise in sub-micron MOSFETs from Subthreshold to Moderate Inversion Regime;2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS);2019-03

4. Analysis and Validation of Low-Frequency Noise Reduction in MOSFET Circuits Using Variable Duty Cycle Switched Biasing;IEEE Journal of the Electron Devices Society;2018

5. Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions;JSTS:Journal of Semiconductor Technology and Science;2013-12-31

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