Scalable Non-Linear Electrical Model for Industrial GaN HEMT Technologies up to 50 GHz-Reference-Cited by-同舟云学术

Scalable Non-Linear Electrical Model for Industrial GaN HEMT Technologies up to 50 GHz

Published:2022-01-16 Issue: Volume: Page:
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Container-title:2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
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Author:

Callet Guillaume¹,Fahkfahk Seifeddine¹,Chang Christophe¹,Giacomo-Brunel Valeria Di¹,Favede Laurent¹,Blanck Herve²

Affiliation:

1. United Monolithic Semiconductors,Villebon/Yvette,France

2. United Monolithic Semiconductors,Ulm,Germany

Publisher

IEEE

Link

Reference8 articles.

1. Nonlinear charge trapping effects on pulsed I/V characteristics of GaN FETs;santarelli;European Microwave Integrated Circuit Conference,0

4. Nonlinear transistor modeling for industrial 0.25?malgan-gan hemts;chang;2013 Eur Microw Integr Circuits Conf,0

5. A 47–50GHz 3W MMIC Power Amplifier Using 100nm GaN Technology;fakhfakh;European Microwave Integrated Circuit Conference,0

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1. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16