A New High-Frequency HEMT GaN Extrinsic Capacitance Extraction Technique
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/4357983/09611072.pdf?arnumber=9611072
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28
2. An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28
3. Improved Whale Optimization Algorithm Based Parameter Extraction Method for GaN HEMT on Si and SiC Substrates;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
4. Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor;Semiconductor Science and Technology;2023-06-29
5. An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-26
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