A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/4357983/09629287.pdf?arnumber=9629287
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09
2. A 2.4GHz Low Noise Amplifier for 5G Application;2024 Second International Conference on Data Science and Information System (ICDSIS);2024-05-17
3. Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits;ACS Photonics;2024-03-19
4. Dual sideband receiver for radio-over-fiber;Optics Express;2024-01-25
5. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
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