A Submilliwatt K-Band Low-Noise Amplifier for Next Generation Radio Astronomical Receivers in 65-nm CMOS Process
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9134367/09097831.pdf?arnumber=9097831
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CMOS low noise amplifier design trends towards millimeter-wave IoT sensors;Ain Shams Engineering Journal;2024-02
2. A 23.6–46.5 GHz LNA with 3 dB NF and 24 dB Gain Tuning Range in 28-nm CMOS Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01
3. High Gain and Low Power K-Band LNA With Reversed Current-Reuse Topology;IEEE Microwave and Wireless Technology Letters;2023-12
4. Flexible Low Noise Amplifier for IoT Applications in Biomedical Devices;2023 IEEE International Conference on Recent Advances in Systems Science and Engineering (RASSE);2023-11-08
5. A 1.4-mW Ka-band Low Noise Amplifier Using Self-Resonant Transformer Matching in 90-nm CMOS Process;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14
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