Design of three-level flying-capacitor commutation cells with four paralleled 650 V/60 A GaN HEMTs

Author:

Sathler Hans H.,Zhao Tianyu,Costa Francois,Cougo Bernardo,Segond Gilles,Burgos Rolando,Labrousse Denis

Publisher

IEEE

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design and efficiency measurement of a sub-unit for a 20kW DC-DC multiphase power converter;2023 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC);2023-03-29

2. Paralleling 650 V/150 A GaN HEMTs for Cryogenically Cooled Solid-State Circuit Breaker Applications;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

3. Dynamic ON-Resistance Characterization of GaN HEMT Under Soft-Switching Condition;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07

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