SiGe and GaAs as competitive technologies for RF-applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx4/5956/15940/00741886.pdf?arnumber=741886
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17
2. A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology;Microelectronics Reliability;2011-12
3. Review of SiGe HBTs on SOI;Solid-State Electronics;2005-09
4. A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD;Microelectronics Reliability;2005-02
5. An automated design system methodology and strategy for electrostatic discharge protection circuits in RF CMOS and BiCMOS silicon germanium technology;Journal of Electrostatics;2003-10
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