A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS-Reference-Cited by-同舟云学术

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A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS

Published:2021-06-07 Issue: Volume: Page:
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Container-title:2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Tang Xinyan,Nguyen Johan,Mangraviti Giovanni,Zong Zhiwei,Wambacq Piet

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9489353/9490399/09490470.pdf?arnumber=9490470

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Power-Efficient, F-Band, 6.5-dB NF, Staggered-Tuned, Inverter-Based CMOS LNA for 6G Receivers;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Co-simulation Workflow for D-Band Power Amplifier Linearization using Walsh-based DPD;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. A 94.6 to 105.2GHz CMOS Power Amplifier Achieving 17dBm P_sat, 12.5dBm OP_1dB and 11.5% PAE with a Digital Power Detection Loop;2024 Photonics & Electromagnetics Research Symposium (PIERS);2024-04-21

4. The Evolution of Applications, Hardware Design, and Channel Modeling for Terahertz (THz) Band Communications and Sensing: Ready for 6G?;Proceedings of the IEEE;2024

5. A 3-Stacked 10.2 dBm OP1dB D-Band Power Amplifier in 22 nm FDSOI for 6G Communication;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

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