Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology-Reference-Cited by-同舟云学术

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Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:2015 10th European Microwave Integrated Circuits Conference (EuMIC)
language:
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Author:

Dennler Philippe¹,Maroldt Stephan¹,Quay Rudiger¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, D-79108 Freiburg, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7331896/7345038/07345060.pdf?arnumber=7345060

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 6–18-GHz High Harmonic Suppression GaN Power Amplifier MMIC for Integrated Electronic Warfare Systems;IEEE Microwave and Wireless Technology Letters;2023-08

2. Design of a 2-W Wideband Power Amplifier MMIC in 0.15μm PHEMT Technology;2023 8th International Conference on Computer and Communication Systems (ICCCS);2023-04-21

3. Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare;International Journal of Microwave and Wireless Technologies;2019-05-03

4. GaN Widening Possibilties for PAs : Wide-band GaN Power Amplifiers Utilize the Technology's Special Properties;IEEE Microwave Magazine;2017-06

5. Distributed power amplifier with novel integration technique of broadband impedance transformer using pseudomorphic HEMT and gallium nitride HEMT;IET Microwaves, Antennas & Propagation;2017-05-04

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