Author:
Oreja Gigorro Eduardo,Delgado Pascual Emilio,Sánchez Martínez Juan José,Gil Heras María Luz,Bueno Fernández Virginia,Bódalo Márquez Antonio,Grajal Jesús
Abstract
AbstractA 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering
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