Behavior and test of open-gate defects in FinFET based cells-Reference-Cited by-同舟云学术

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Behavior and test of open-gate defects in FinFET based cells

Published:2016-05 Issue: Volume: Page:
ISSN:
Container-title:2016 21th IEEE European Test Symposium (ETS)
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Author:

Mesalles F.,Villacorta H.,Renovell M.,Champac V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7510593/7519270/07519305.pdf?arnumber=7519305

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving Efficiency of Cell-Aware Fault Modeling By Utilizing Defect-Free Analog Simulation;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08

2. Machine Learning Support for Logic Diagnosis and Defect Classification;Machine Learning Support for Fault Diagnosis of System-on-Chip;2022-10-22

3. Comparing the Impact of Power Supply Voltage on CMOS- and FinFET-Based SRAMs in the Presence of Resistive Defects;Journal of Electronic Testing;2020-04

4. Analysis of Bridge Defects in STT-MRAM Cells Under Process Variations and a Robust DFT Technique for Their Detection;VLSI-SoC: Design and Engineering of Electronics Systems Based on New Computing Paradigms;2019

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