Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices-Reference-Cited by-同舟云学术

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Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices

Published:2011-03 Issue: Volume: Page:
ISSN:
Container-title:Ulis 2011 Ultimate Integration on Silicon
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Author:

Makovejev S.,Kilchytska V.,Arshad M. K. Md,Flandre D.,Andrieu F.,Faynot O.,Olsen S.,Raskin J.-P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5751927/5757945/05758009.pdf?arnumber=5758009

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness-Improved ESD Protection Devices With Low Leakage Using Middle Silicon Layer in Double SOI Technology;IEEE Transactions on Electron Devices;2024-06

2. Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI;IEEE Transactions on Device and Materials Reliability;2022-09

3. Improved electrical and RF performance of a junctionless vertical super-thin body (VSTB) FET by increased substrate doping;Materials Science in Semiconductor Processing;2021-11

4. Leakage Current and Thermal Effects;Industry Standard FDSOI Compact Model BSIM-IMG for IC Design;2019

5. Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG;Microelectronics Journal;2016-10

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