Study of an Avalanche Compensation Mirror for SiGe High Performance Power Amplifiers Dedicated to 5G Applications
Author:
Affiliation:
1. University of Bordeaux, CNRS UMR 5218,Talence,France
2. United Monolithic Semiconductors,Villebon-sur-Yvette,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10261937/10261649/10261653.pdf?arnumber=10261653
Reference9 articles.
1. A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication
2. A 24–30 GHz Power Amplifier with >20 dBm Psat and <0.1 dB AM-AM Distortion for 5G Applications
3. A Linear and Efficient Power Amplifier Supporting Wideband 64-QAM for 5G Applications from 26 to 30 GHz in SiGe:C BiCMOS
4. Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage
5. Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors
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