A Linear and Efficient Power Amplifier Supporting Wideband 64-QAM for 5G Applications from 26 to 30 GHz in SiGe:C BiCMOS
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9489353/9490399/09490461.pdf?arnumber=9490461
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advancements in 300 mm GaN-on-Si Technology With Industry’s First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors;IEEE Microwave and Wireless Technology Letters;2024-06
2. Parametric-Oscillation-Free Efficient SiGe:C Power Amplifier Design for Ku-/Ka-Band SATCOM;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
3. Challenges and Future Trends;GaN Technology;2024
4. A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS;IEICE Transactions on Electronics;2023-11-01
5. Study of an Avalanche Compensation Mirror for SiGe High Performance Power Amplifiers Dedicated to 5G Applications;2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI);2023-08-28
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