A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13µm BiCMOS Technology for 5G Beamforming Applications
Author:
Affiliation:
1. University of Bordeaux, CNRS UMR 5218,Talence,France
2. United Monolithic Semiconductors,Villebon-sur-Yvette,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10261937/10261649/10261664.pdf?arnumber=10261664
Reference10 articles.
1. A Linear and Efficient Power Amplifier Supporting Wideband 64-QAM for 5G Applications from 26 to 30 GHz in SiGe:C BiCMOS
2. A 65 nm CMOS SOI 4-bit Digitally Controlled Variable Gain Amplifier for Ka-Band Beamforming;voisin;2020 15th European Microwave Integrated Circuits Conference (EuMIC),0
3. A Broadband 4.5–15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE
4. Compact 26–30 GHz Reflection-Type Phase Shifter With 8-Bit Switched Phase Tuning Utilizing Chalcogenide Phase-Change Switches
5. A 28GHz Hybrid-Beamforming Transmitter Array Supporting Concurrent Dual Data Steams and Spatial Notch Steering for 5G MIMO
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