Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions-Reference-Cited by-同舟云学术

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Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Published:2024-02 Issue:2 Volume:71 Page:154-159
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Mao Bangyao¹^ORCID,Zhao Guijuan¹^ORCID,Lv Xiurui¹,Wang Xingliang¹^ORCID,Wei Wanting¹,Liu Guipeng¹^ORCID,Liu Jiande²,Liu Linsheng³

Affiliation:

1. School of Physical Science and Technology, Lanzhou University, Lanzhou, China

2. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China

3. School of Electronic and Information Engineering and the School of Integrated Circuits, Guangxi Normal University, Guilin, China

Funder

National Natural Science Foundation of China

Gansu Province Natural Science Foundation

Fundamental Research Funds for the Central Universities

Gansu Provincial Scientific and Technologic Planning Program

Science and Technology Base and Talent Special Project of Guangxi

Guilin Innovation Platform and Talent Plan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/23/10438205/10415454.pdf?arnumber=10415454

Reference54 articles.

1. High-k dielectrics for 4H-silicon carbide: present status and future perspectives

2. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

3. Band alignment of monolayer MoS₂/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

4. Investigation of the recovery behavior of irradiation defects induced by a neutron in 4H-SiC combining Raman scattering and lattice parameters

5. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

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