High-k dielectrics for 4H-silicon carbide: present status and future perspectives

Author:

Siddiqui Amna12345ORCID,Khosa Rabia Yasmin12345,Usman Muhammad12345ORCID

Affiliation:

1. Solid State Electronic Devices Lab

2. Experimental Physics Department

3. National Centre for Physics

4. Islamabad

5. Pakistan

Abstract

Unleashing the true merits of high-κ dielectrics for 4H-SiC by taking a closer look at the morphological, structural, interfacial, and electrical behavior of the high-κ dielectric/4H-SiC system.

Funder

Vetenskapsrådet

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Reference151 articles.

1. M. Östling , R.Ghandi and C. M.Zetterling , SiC power devices - Present status, applications and future perspective , San Diego , CA, USA , 2011

2. S. H. Ryu , C.Capell , L.Cheng , C.Jonas , A.Gupta , M.Donofrio , J.Clayton , M.O'Loughlin , A.Burk , D.Grider , A.Agarwal , J. W.Palmour , A.Hefner and S. RaleighBhattacharya , High performance, ultra high voltage 4H-SiC IGBTs, NC, USA , 2012

3. Fluorescent SiC as a new material for white LEDs

4. Y. Goldberg , M. E.Levinshtein and S. L.Ruyyantsev , Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe , Wiley , New York, NY, USA , 2001

5. P. G. Neudeck , Progress towards high temperature, high power SiC devices , Adam Hilger , Bristok, UK , 1994

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