A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics-Reference-Cited by-同舟云学术

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A High-Temperature Multichip Power Module (MCPM) Inverter utilizing Silicon Carbide (SiC) and Silicon on Insulator (SOI) Electronics

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Container-title:37th IEEE Power Electronics Specialists Conference
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Author:

Hornberger J.M.,Cilio E.,Schupbach R.M.,Lostetter A.B.,Mantooth H.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11209/36090/01711732.pdf?arnumber=1711732

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate Driver with Dynamic Drive Strength on High-Temperature CMOS Process for Heterogeneous Integration inside the SiC Power Module;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

2. Review of High-Temperature Power Electronics Converters;IEEE Transactions on Power Electronics;2022-12

3. Integrated motor drives: state of the art and future trends;IET Electric Power Applications;2016-09

4. Analysis on partial thermal resistances of packaged SiC schottky barrier diodes at elevated temperatures;Japanese Journal of Applied Physics;2016-03-22

5. Thermal Runaway Robustness of SiC VJFETs;Materials Science Forum;2013-01

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