Evaluation of parallel and series connection of silicon carbide Schottky barrier diode (SiC-SBD)-Reference-Cited by-同舟云学术

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Evaluation of parallel and series connection of silicon carbide Schottky barrier diode (SiC-SBD)

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Container-title:2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551)
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Author:

Kodani K.,Matsumoto T.,Saito S.,Takao K.,Mogi T.,Yatsuo T.,Arai K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9371/29755/01355307.pdf?arnumber=1355307

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