Monolithic Integration of Photo-Diode and Transimpedance Amplifier in CMOS 90 nm Technology
Author:
Affiliation:
1. National Kaohsiung University of Science and Technology,Department of Electronic Engineering,Kaohsiung,Taiwan
2. National Sun Yat-sen University,Department of Photonics,Kaohsiung,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10179490/10179492/10179578.pdf?arnumber=10179578
Reference4 articles.
1. 32-Gb/s NRZ and 40-Gb/s PAM-4 Transimpedance Amplifier Paralleling with a Differentiator for Bandwidth Enhancement in 90-nm CMOS Technology
2. 1310/1550 nm Optical Receivers With Schottky Photodiode in Bulk CMOS
3. A High-Speed CMOS Integrated Optical Receiver With an Under-Damped TIA
4. A 65-nm CMOS P-well/Deep N-well avalanche photodetector for integrated 850-nm optical
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